SSM6J23FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J23FE
High Current Switching Applicat...
SSM6J23FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J23FE
High Current Switching Applications DC-DC Converter
Unit: mm
Suitable for high-density mounting due to compact package
Low on-resistance:
Ron = 160 mΩ (max) (@VGS = -4.0 V) Ron = 210 mΩ (max) (@VGS = -2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source
voltage
VDS
-12
V
Gate-Source
voltage
VGSS
±8
V
Drain current
DC
ID
-1.2
A
Pulse
IDP
-4.8
1,2,5,6 : Drain
3
: Gate
4
: Source
Drain power dissipation Channel temperature Storage temperature range
PD
500
mW
(Note 1)
Tch
150
°C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
2-2N1A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in
Weight: 3 mg (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Marking
Equivalent Circuit
654
654
KE
123
123
Handling Precaution
When handling indivi...