SSM6J26FE

SSM6J26FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J26FE High Speed Switching Applications Unit: mm 0.2±0.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.5 V) Ron = 980mΩ (max) (@VGS = -1.8 V) Absolute Maximum Ratings (Ta = 25°C) 1.6±0.05 1.2±0.05 1 6 2 5 1.6±0.05 1.0±0.05 0.5 0.5 0.12±0.05 Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range Symbol Rating Unit VDS -20 V VGSS ±8 V ID -0.5 A IDP -1.5 PD 500 mW (Note 1) Tch 150 °C Tstg −55 to 150 °C 3 4 0.55±0.05 1,2,5,6 :Drain 3 :Gate ES6 4 :Source JEDEC ― Note: Using continuously under heavy loads (e.g. the application of JEITA ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2N1A reliability significantly even if the operating conditions (i.e. Weight: 3.0 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad...