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SSM6J401TU

Toshiba Semiconductor

Silicon P-Channel MOSFET

Description
MOSFETs Silicon P-Channel MOS SSM6J401TU 1. Applications DC-DC Converters High-Speed Switching 2. Features (1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = -4 V) RDS(ON) = 73 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment UF6 SSM6J401TU 1,2,5,6: Drain 3: Gate 4: Source ©2022 1 Toshiba Electron...


Toshiba Semiconductor

SSM6J401TU

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