SSM6J409TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
SSM6J409TU
○ Power Management Switch Ap...
SSM6J409TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
SSM6J409TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
1.5V drive Low ON-resistance:
Ron = 72.3mΩ (max) (@VGS = -1.5 V) Ron = 46.2mΩ (max) (@VGS = -1.8 V) Ron = 30.2mΩ (max) (@VGS = -2.5 V) Ron = 22.1mΩ (max) (@VGS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source
voltage
VDSS
−20
V
Gate-Source
voltage
VGSS
±8
V
Drain current
DC
ID (Note 1)
−9.5
A
Pulse
IDP (Note 1)
−19.0
Drain power dissipation
PD (Note 2)
1
W
t=10s
2
1,2,5,6 : Drain
3
: Gate
4
: Source
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
⎯
temperature/current/
voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
⎯
reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute
TOSHIBA
2-2T1D
maximum ratings. Please design the appropriate reliability upon reviewing the
Weight: 7.6mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on...