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SSM6J412TU Datasheet

Part Number SSM6J412TU
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Datasheet SSM6J412TU DatasheetSSM6J412TU Datasheet (PDF)

SSM6J412TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J412TU ○ Power Management Switch Applications Unit: mm +0.1 0.3-0.05 • 1.5-V drive • Low ON-resistance: RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V) 2.1±0.1 1.7±0.1 1 6 2 5 2.0±0.1 1.3±0.1 0.65 0.65 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 3 4 +0.06 0.16.

  SSM6J412TU   SSM6J412TU






Silicon P-Channel MOSFET

SSM6J412TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J412TU ○ Power Management Switch Applications Unit: mm +0.1 0.3-0.05 • 1.5-V drive • Low ON-resistance: RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V) 2.1±0.1 1.7±0.1 1 6 2 5 2.0±0.1 1.3±0.1 0.65 0.65 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 3 4 +0.06 0.16-0.05 0.7±0.05 Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID -4.0 A Pulse IDP (Note 1) -16.0 Power dissipation PD (Note 2) 1 W Channel temperature Tch 150 °C UF6 1,2,5,6: Drain 3: Gate 4: Source Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEITA ― TOSHIBA 2-2T1D Weight : 7.0mg ( typ. ) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pw ≤ 10μs, Duty. ≤.


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