SSM6K07FU

www.DataSheet4U.com SSM6K07FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K07FU DC-DC Converters High Speed Switching Applications · · · Small package Low on resistance : Ron = 130 mΩ max (@VGS = 10 V) : Ron = 220 mΩ max (@VGS = 4 V) Low input capacitance : Ciss = 102 pF typ. : Crss = 22 pF typ. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 1.5 3.0 300 150 -55~150 Unit V V A Drain power dissipation Channel temperature Storage temperature range mW °C °C JEDEC JEITA TOSHIBA ― ― 2-2J1D Note 1: Mounted on FR4 board. (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.32 mm ´ 6) 2 Weight: 6.8 mg (typ.) Marking Equivalent Circuit (top view) Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2003-03-28 SSM6K07FU Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Input capacitance Reverse transfer capacitance Output capacitance Switchi...