SSM6K204FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K204FE
○ High-Speed Switching Applications
...
SSM6K204FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K204FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
1.5V drive Low ON-resistance:
Ron = 307 mΩ (max) (@VGS = 1.5V) Ron = 214 mΩ (max) (@VGS = 1.8V) Ron = 164 mΩ (max) (@VGS = 2.5V) Ron = 126 mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25˚C)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drain–source
voltage
VDSS
20
V
Gate–source
voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
2.0 A
4.0
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature Storage temperature
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
ES6
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Characteristic
Drai...