SSM6K341NU

MOSFETs Silicon N-channel MOS (U-MOS-H) SSM6K341NU 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 4.0 V drive (2) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.) (@VGS = 10 V) RDS(ON) = 36 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 43 mΩ (typ.) (@VGS = 4 V) 3. Packaging and Pin Assignment UDFN6B SSM6K341NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-12 2020-01-07 Rev.7.0 SSM6K341NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 6 A Drain current (pulsed) (Note 1), (Note 2) IDP 24 Power dissipation (Note 3) PD 1.25 W Power dissipation (t = 10 s) (Note 3) PD 2.5 Single-pulse avalanche energy (Note 4) EAS 28.9 mJ Avalanche current IAR 6 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Pr...