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SSM6K34TU Datasheet

Part Number SSM6K34TU
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description MOSFET
Datasheet SSM6K34TU DatasheetSSM6K34TU Datasheet (PDF)

SSM6K34TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K34TU High Current Switching Applications Power Management Switch Applications • • 4.5Vdrive Low on resistance: :Ron = 77 mΩ (max) (@VGS = 4.5 V) :Ron = 50 mΩ (max) (@VGS = 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating.

  SSM6K34TU   SSM6K34TU






MOSFET

SSM6K34TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K34TU High Current Switching Applications Power Management Switch Applications • • 4.5Vdrive Low on resistance: :Ron = 77 mΩ (max) (@VGS = 4.5 V) :Ron = 50 mΩ (max) (@VGS = 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 3 6 500 150 −55~150 Unit V V A mW °C °C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Note: 1,2,5,6 : Drain 3 : Gate 4 : Source JEDEC JEITA TOSHIBA ⎯ ⎯ 2-2T1D Weight: 7.0 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance .


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