MOSFETs Silicon N-Channel MOS
SSM6K404TU
1. Applications
• Power Management Switches • High-Speed Switching
2. Features
...
MOSFETs Silicon N-Channel MOS
SSM6K404TU
1. Applications
Power Management Switches High-Speed Switching
2. Features
(1) 1.5-V drive (2) Low drain-source on-resistance
: RDS(ON) = 147 mΩ (max) (@VGS = 1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 70 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 55 mΩ (max) (@VGS = 4.0 V)
3. Packaging and Internal Circuit
UF6
SSM6K404TU
1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain
©2021-2022
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2007-01
2022-12-01 Rev.1.0
SSM6K404TU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage Gate-source
voltage
VDSS
20
V
VGSS
±10
Drain current (DC)
(Note 1)
ID
3.0
A
Drain current (pulsed)
(Note 1), (Note 2)
IDP
6.0
Power dissipation Channel temperature
(Note 3)
PD
Tch
500
mW
150
�
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reli...