SSM6K405TU

MOSFETs Silicon N-Channel MOS SSM6K405TU 1. Applications Power Management Switches High-Speed Switching 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 307 mΩ (max) (@VGS = 1.5 V) RDS(ON) = 214 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 164 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit UF6 SSM6K405TU 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2007-10 2022-12-01 Rev.1.0 SSM6K405TU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 20 V VGSS ±10 Drain current (DC) (Note 1) ID 2.0 A Drain current (pulsed) (Note 1), (Note 2) IDP 4.0 Power dissipation Channel temperature (Note 3) PD Tch 500 mW 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. re...