SSM6K407TU

SSM6K407TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K407TU ○ DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 2.0±0.1 1.3±0.1 0.65 0.65 z 4V drive z Low ON-resistance : Ron = 440mΩ (max) (@VGS = 4 V) : Ron = 300mΩ (max) (@VGS = 10 V) 1 6 2 5 3 4 0.166±0.05 0.7±0.05 Absolute Maximum Ratings (Ta = 25℃) (Note) Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol Rating VDSS VGSS ID IDP PD (Note1) Tch Tstg 60 ±20 2 6 500 150 −55 to 150 Unit V V A mW °C °C UF6 1,2,5,6 : Drain 3 : Gate 4 : Source JEDEC ⎯ JEITA ⎯ TOSHIBA 2-2T1D Weight: 7mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Start of commercial production 2008-01 1 2014-03-01 Electrical Charac...