MOSFETs Silicon N-channel MOS (U-MOS-H)
SSM6K514NU
1. Applications
• Power Management Switches
2. Features
(1) 4.5 V dr...
MOSFETs Silicon N-channel MOS (U-MOS-H)
SSM6K514NU
1. Applications
Power Management Switches
2. Features
(1) 4.5 V drive (2) Low drain-source on-resistance
: RDS(ON) = 11.2 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 8.9 mΩ (typ.) (@VGS = 10 V)
3. Packaging and Pin Assignment
UDFN6B
SSM6K514NU
1, 2, 5, 6: Drain 3: Gate 4: Source
©2016 Toshiba Corporation
1
Start of commercial production
2016-05
2017-06-16 Rev.3.0
SSM6K514NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Drain-source
voltage
VDSS 40 V
Gate-source
voltage
VGSS
±20
Drain current (DC) Drain current (pulsed)
(Note 1)
ID IDP
12 A 50
Power dissipation
(Note 2)
PD
1.25 W
Power dissipation
(t ≤ 10 s)
(Note 2)
2.5
Single-pulse avalanche energy
(Note 3)
EAS
49.1 mJ
Avalanche current
IAR 7 A
Channel temperature Storage temperature
Tch 150 Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failur...
