SSM6L10TU

SSM6L10TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance Q1: Ron = 395mΩ (max) (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm 2.1±0.1 1.7±0.1 0.65 0.65 Unit V V A Q1 Absolute Maximum Ratings (Ta = 25°C) 2.0±0.1 1.3±0.1 Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 ± 12 0.5 1.5 1 2 3 6 5 4 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating -20 ±8 -0.5 -1.5 Unit V V A 0.7±0.05 UF6 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 ― ― 2-2T1B Absolute Maximum Ratings(Q1,Q2 Common)(Ta = 25°C) Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD (Note 1) JEDEC JEITA TOSHIBA Rating 500 150 −55~150 Unit mW °C °C Weight: 7.0 mg (typ.) Tch Tstg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling ...