SSM6L12TU

SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: RDS(ON) = 180mΩ (max) (@VGS = 2.5 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ± 12 V Drain current DC ID Pulse IDP 0.5 A 1.5 Q2 Absolute Maximum Ratings (Ta = 25°C) 2.0±0.1 1.3±0.1 0.65 0.65 1 6 2 5 3 4 +0.06 0.16-0.05 0.7±0.05 Characteristics Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ± 12 V Drain current DC ID -0.5 A Pulse IDP -1.5 Absolute Maximum Ratings (Q1,Q2 Common) (Ta = 25°C) Characteristics Power dissipation Channel temperature Storage temperature range Symbol Rating Unit PD 500 mW (Note 1) Tch 150 °C Tstg −55 to 150 °C 1.Source1 2.Gate1 3.Drain2 UF6 4.Source2 5.Gate2 6.Drain1 JEDEC ― JEITA ― TOSHIBA 2-2T1B Weight: 7.0 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliabi...