SSM6L16FE
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(π-MOSVI)
SSM6L16FE
High Speed Switching Applic...
SSM6L16FE
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(π-MOSVI)
SSM6L16FE
High Speed Switching Applications
Analog Switch Applications
Small package Low on-resistance
Q1: RDS(ON) = 4 Ω (max) (@VGS = 2.5 V) Q2: RDS(ON) = 12 Ω (max) (@VGS = −2.5 V)
Unit: mm
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source
voltage Gate-Source
voltage
Drain current
DC Pulse
Symbol
VDSS VGSS
ID IDP
Rating
Unit
20
V
±10
V
100 mA
200
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source
voltage Gate-Source
voltage
Drain current
DC Pulse
Symbol
VDSS VGSS
ID IDP
Rating
Unit
-20
V
±10
V
-100 mA
-200
Absolute Maximum Ratings (Q1, Q2 Common)
(Ta = 25°C)
1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2
6: Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2N1D
Weight: 3 mg (typ.)
Characteristics
Symbol
Rating
Unit
Power dissipation Channel temperature Storage temperature range
PD (Note 1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Metho...