SSM6L35FU

SSM6L35FU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FU ○ High-Speed Switching Applications ○ Analog Switch Applications N-ch: 1.2-V drive P-ch: 1.2-V drive N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = : Ron = : Ron = 8 Ω (max) (@VGS = 1.5 V) 4 Ω (max) (@VGS = 2.5 V) 3 Ω (max) (@VGS = 4.0 V) Unit: mm Q2 P-ch: Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) 1.SOURCE 1 4.SOURCE 2 5.GATE 2 6.DRAIN 1 2.GATE 1 3.DRAIN 2 Rating 20 ±10 180 360 Unit V V mA Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain–source voltage Gate–source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP JEDEC JEITA TOSHIBA 2-2J1C Weight: 6.8 mg (typ.) Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain–source voltage Gate–source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating -20 ±10 -100 -200 Unit V V mA Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2) Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD(Note 1) Tch Tstg Rating 200 150 −55 to 150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/...