SSM6L36FE

SSM6L36FE www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36FE ○ High-Speed Switching Applications 1.5-V drive Low ON-resistance Q1 Nch: Ron = 1.52Ω (max) (@VGS = 1.5 V) Ron = 1.14Ω (max) (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) Ron = 0.63Ω (max) (@VGS = 5.0 V) Q2 Pch: Ron = 3.60Ω (max) (@VGS = -1.5 V) Ron = 2.70Ω (max) (@VGS = -1.8 V) Ron = 1.60Ω (max) (@VGS = -2.8 V) Ron = 1.31Ω (max) (@VGS = -4.5 V) 1.6±0.05 1.2±0.05 Unit: mm 1.6±0.05 1.0±0.05 0.5 0.5 1 2 3 6 5 4 0.2±0.05 0.12±0.05 0.55±0.05 Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain–source voltage Gate–source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating 20 ±10 500 1000 Unit V V mA 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 ES6 JEDEC JEITA TOSHIBA 2-2N1D Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain–source voltage Gate–source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating -20 ±8 -330 -660 Unit V V mA Weight: 3.0 mg (typ.) Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2) Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD(Note 1) Tch Tstg Rating 150 150 −55 to 150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantl...