www.DataSheet4U.com
SSM6N04FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N04FU
High Speed Switch Applications
· · · · With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch .
N-Channel MOSFET
www.DataSheet4U.com
SSM6N04FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N04FU
High Speed Switch Applications
· · · · With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55~150 Unit V V mA mW °C °C
Note: Total rating
JEDEC JEITA TOSHIBA
― ― 2-2J1C
Weight: 6.8 mg (typ.)
Marking
Pin Assignment (top view)
(Q1, Q2 common) Equivalent Circuit
1
2003-03-28
SSM6N04FU
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton toff RGS Test Condition VGS = 10 V, VDS = 0 ID = 100 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V VGS = 0~10 V Min ¾ 20 ¾ 0.7 25 ¾ ¾ ¾ ¾ ¾ ¾ 0.7 Typ. .