SSM6N05FU

SSM6N05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N05FU High Speed Switching Applications Unit: mm · Small package · Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) · Low gate threshold voltage Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±12 V Drain current DC Pulse ID 400 mA IDP 800 Drain power dissipation (Ta = 25°C) PD (Note1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C JEDEC ― Note1: Total rating, mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm2 ´ 6) JEITA TOSHIBA ― 2-2J1C Weight: 6.8 mg (typ.) Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2002-01-17 Marking 6 5 4 DF 1 2 3 Equivalent Circuit (top view) 6 5 4 Q1 Q2 1 2 3 SSM6N05FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance S...