SSM6N15AFU

SSM6N15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFU Load Switching Applications 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm (Q1, Q2 Common) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 400 300 150 −55 to 150 Unit V V mA mW °C °C US6 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 JEDEC ― JEITA SC-88 Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2J1C high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 6.8 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm × 6) Note: 0.4 mm 0.8 mm Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 DI 1 2 3 1 Q1 Q2 2 3 Start of commercial production 201...