SSM6N36FE

SSM6N36FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36FE ○ High-Speed Switching Applications 1.5-V drive Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 1.6±0.05 1.0±0.05 0.5 0.5 1.6±0.05 1.2±0.05 Unit: mm 1 6 2 5 3 4 0.2±0.05 Characteristics Symbol Rating Unit 0.12±0.05 0.55±0.05 Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 500 mA 1000 Drain power dissipation PD (Note 1) 150 mW ES6 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 Channel temperature Storage temperature Tch 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2N1A reliability significantly even if the operating conditions (i.e. operating Weight: 3.0 mg (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)....