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SSM6N37CTD Datasheet

Part Number SSM6N37CTD
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet SSM6N37CTD DatasheetSSM6N37CTD Datasheet (PDF)

SSM6N37CTD TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37CTD ○ Power Management Switch Applications • 1.5V drive • Low ON-resistance Ron = 5.60 Ω (max) (@VGS = 1.5 V) Ron = 4.05 Ω (max) (@VGS = 1.8 V) Ron = 3.02 Ω (max) (@VGS = 2.5 V) Ron = 2.20 Ω (max) (@VGS = 4.5 V) Top View 1.0±0.05 0.15±0.03 65 4 0.05±0.03 Unit: mm 0.6±0.02 0.9±0.05 0.2+±0.03 0.4±0.03 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Drain–source voltage .

  SSM6N37CTD   SSM6N37CTD






N-Channel MOSFET

SSM6N37CTD TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37CTD ○ Power Management Switch Applications • 1.5V drive • Low ON-resistance Ron = 5.60 Ω (max) (@VGS = 1.5 V) Ron = 4.05 Ω (max) (@VGS = 1.8 V) Ron = 3.02 Ω (max) (@VGS = 2.5 V) Ron = 2.20 Ω (max) (@VGS = 4.5 V) Top View 1.0±0.05 0.15±0.03 65 4 0.05±0.03 Unit: mm 0.6±0.02 0.9±0.05 0.2+±0.03 0.4±0.03 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 250 mA 500 Drain power dissipation PD (Note 1) 140 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C 1 23 0.35 0.35 ±0.02 ±0.02 0.7±0.03 0.075±0.03 +0.02 0.38 -0.03 CST6D 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-1S1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute Weight : 1.0 mg (typ.) maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated f.


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