SSM6N37FE

SSM6N37FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37FE ○ High-Speed Switching Applications ○ Analog Switching Applications 1.5-V drive Suitable for high-density mounting due to compact package 1.6±0.05 1.0±0.05 0.5 0.5 : mm 1.6±0.05 1.2±0.05 Low ON-resistance 5 4 3 0.55±0.05 Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ± 10 250 500 150 150 −55 to 150 Unit V V mA mW °C °C 1.Source1 2.Gate1 4.Source2 5.Gate2 6.Drain1 ES6 JEDEC JEITA TOSHIBA 3.Drain2 ― ― 2-2N1D Weight: 3.0 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 SU 1 2 3 1 Q1 Q2 2 3 1 2009-11-12 0.12±0.05 Absolute Maximum...