SSM6N37FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N37FU
○ High Speed Switching Applications ○ A...
SSM6N37FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N37FU
○ High Speed Switching Applications ○ Analog Switch Applications
Unit: mm
1.5V drive Low ON-resistance
RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source
voltage
VDSS
20
V
Gate-Source
voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
250 mA
500
Power dissipation
PD(Note1)
300
mW
JEDEC
―
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in
TOSHIBA
2-2J1C
Weight: 6.8 mg(typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm2 × 6)
0.4 mm
0.8 mm
Marking(top view)
6
5
4
SU
1
2
3
Equivale...