SSM6N57NU

MOSFETs Silicon N-Channel MOS SSM6N57NU 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Internal Circuit UDFN6 SSM6N57NU 1. Source1 (S1) 2. Gate1 (G1) 3. Drain2 (D2) 4. Source2 (S2) 5. Gate2 (G2) 6. Drain1 (D1) ©2019-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2021-09-17 Rev.4.0 SSM6N57NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) (Q1,Q2 Common) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±12 Drain current (DC) (Note 1) ID 4 A Drain current (pulsed) (Note 1), (Note 2) IDP 10 Power dissipation Power dissipation Channel temperature (Note 3) PD t ≤ 10 s (Note 3) PD Tch 1 W 2 W 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating C...