SSM6N58NU

MOSFETs Silicon N-Channel MOS SSM6N58NU 1. Applications Power Management Switches DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 180 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Pin Assignment UDFN6 SSM6N58NU 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 ©2019-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-11 2021-09-17 Rev.7.0 SSM6N58NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) (Q1,Q2 Common) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ± 12 Drain current (DC) (Note 1) ID 4 A Drain current (pulsed) (Note 1), (Note 2) IDP 10 A Power dissipation Power dissipation Channel temperature Storage temperature (t ≤ 10 s) (Note 3) PD (Note 3) PD Tch Tstg 1 W 2 W 150 � -50 to 150 � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") an...