SSM6N67NU

MOSFETs Silicon N-Channel MOS SSM6N67NU 1. Applications Power Management Switches DC-DC Converters 2. Features (1) AEC-Q101 qualified (Note 1) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment UDFN6 SSM6N67NU 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain 1 ©2017 Toshiba Electronic Devices & Storage Corporation 1 2017-12-18 Rev.1.0 SSM6N67NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) (Q1,Q2 Common) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 12/-8 Drain current (DC) (Note 1) ID 4A Drain current (pulsed) (Note 1), (Note 2) IDP 10 Power dissipation (Note 3) PD 1W Power dissipation (t ≤ 10 s) (Note 3) PD 2W Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Preca...