SSM6N7002FU

SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Small package Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGSS ± 20 V Drain current DC Pulse ID 200 mA IDP 800 Drain power dissipation (Ta = 25°C) PD (Note 1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32mm2 × 6) 1.SOURCE1 4.SOURCE2 2.GATE1 5.GATE2 3.DRAIN2 6.DRAIN1 JEDEC JEITA TOSHIBA ― ― 2-2J1C 0.4 mm 0.8 mm Marking 6 5 4 Equivalent Circuit (top view) 6 5 ...