SSM6P28TU

SSM6P28TU www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P28TU High-Speed Switching Applications Power Management Switch Applications 1.8V drive P-ch 2-in-1 Low ON-resistance: Ron = 460 mΩ (max) (@VGS = −1.8 V) 0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1 Unit: mm Ron = 306 mΩ (max) (@VGS = −2.5 V) Ron = 234 mΩ (max) (@VGS = −4.0 V) 1 2 3 6 5 4 Absolute Maximum Ratings (Ta = 25°C) (Q1 , Q2 Common) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −20 ±8 −0.8 −1.6 500 150 −55 to 150 Unit V V A mW °C °C 0.7±0.05 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) UFM JEDEC JEITA TOSHIBA Weight...