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SSM6P35FE Datasheet

Part Number SSM6P35FE
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description P-Channel MOSFET
Datasheet SSM6P35FE DatasheetSSM6P35FE Datasheet (PDF)

SSM6P35FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FE ○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) 1.6±0.05 1.0±0.05 0.5 0.5 1.6±0.05 1.2±0.05 Unit: mm 1 6 2 5 3 4 0.2±0.05 Absolute Maximum Ratings (Ta = 25˚C) (Common to the Q1, Q2) 0.12±0.05 0.55±0.05 Characteristic.

  SSM6P35FE   SSM6P35FE






Part Number SSM6P35FU
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description P-Channel MOSFET
Datasheet SSM6P35FE DatasheetSSM6P35FU Datasheet (PDF)

SSM6P35FU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FU ○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) (Common to the Q1, Q2) Characteristics Symbol Rating Unit Drain–source voltage Gate–source voltage Drain current DC Pulse VDSS .

  SSM6P35FE   SSM6P35FE







P-Channel MOSFET

SSM6P35FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FE ○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) 1.6±0.05 1.0±0.05 0.5 0.5 1.6±0.05 1.2±0.05 Unit: mm 1 6 2 5 3 4 0.2±0.05 Absolute Maximum Ratings (Ta = 25˚C) (Common to the Q1, Q2) 0.12±0.05 0.55±0.05 Characteristics Symbol Rating Unit Drain–source voltage VDSS -20 V Gate–source voltage VGSS ±10 V Drain current DC ID Pulse IDP -100 mA -200 Drain power dissipation PD(Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C ES6 1.Source1 4.Source2 2.Gate1 5.Gate2 3.Drain2 6.Drain1 JEDEC JEITA TOSHIBA 2-2N1D Note: Using continuously under heavy loads (e.g. the application of high Weight: 3.0 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Tota.


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