SSM6P35FU

SSM6P35FU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6P35FU ○ High-Speed Switching Applications ○ Analog Switch Applications 1.2-V drive Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) (Common to the Q1, Q2) Characteristics Symbol Rating Unit Drain–source voltage Gate–source voltage Drain current DC Pulse VDSS VGSS ID IDP -20 V ±10 V -100 mA -200 1.SOURCE 1 2.GATE 1 3.DRAIN 2 4.SOURCE 2 5.GATE 2 6.DRAIN 1 Drain power dissipation PD (Note 1) 200 mW JEDEC - Channel temperature Tch 150 °C JEITA - Storage temperature Tstg -55 to 150 °C TOSHIBA 2-2J1C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 6.8 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 PZ 1 2 3 Q1 Q2 1 2 ...