SSM6P36FE

SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE ○ Power Management Switches 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) Ron = 2.70 Ω (max) (@VGS = -1.8 V) Ron = 1.60 Ω (max) (@VGS = -2.8 V) Ron = 1.31 Ω (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2) 1.6±0.05 1.2±0.05 Unit: mm 1 6 1.6±0.05 1.0±0.05 0.5 0.5 0.2±0.05 0.12±0.05 Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDSS -20 V VGSS ±8 V ID -330 mA IDP -660 PD (Note1) 150 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) 2 5 3 4 0.55±0.05 ES6 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 ...