SSM6P36TU

SSM6P36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36TU ○ Power Management Switches 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V) 0.65 0.65 2.0±0.1 1.3±0.1 1 2 3 Unit: mm 2.1±0.1 1.7±0.1 Absolute Maximum Ratings (Ta = 25 °C) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating -20 ±8 -330 -660 500 150 −55 to 150 Unit V 5 4 mA mW °C °C 0.7±0.05 V 1.Source1 4.Source2 5.Gate2 6.Drain1 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Total rating Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) UF6 JEDEC JEITA TOSHIBA 2.Gate1 3.Drain2 ― ― 2-2T1B Weight: 7.0 mg (typ.) Marking 6 5 4 Equivalent Cir...