SSM6P40TU

SSM6P40TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications 4.0 V drive P-ch, 2-in-1 Low ON-resistance: Unit: mm 2.1±0.1 1.7±0.1 0.65 0.65 1 2 3 6 5 4 0.166±0.05 Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V) Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating -30 ± 20 -1.4 -2.8 500 150 −55 to150 Unit V V A mW °C °C 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 0.7±0.05 UF6 JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2T1B reliability significantly even if the operating conditions (i.e. operating Weight: 7.0 mg (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on an FR4 board. (Total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Marking 6 5 4 Equivalent Circuit (t...