SSM6P47NU

SSM6P47NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) SSM6P47NU Power Management Switch Applications 1.5V drive Low ON-resistance: RDS(on) = 242 mΩ (max) (@VGS = -1.5 V) RDS(on) = 170 mΩ (max) (@VGS = -1.8 V) RDS(on) = 125 mΩ (max) (@VGS = -2.5 V) RDS(on) = 95 mΩ (max) (@VGS = -4.5 V) 0.75±0.05 2.0±0.1 B A Unit: mm 2.0±0.1 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP (Note 1) PD t < 10s Tch Tstg Rating −20 ±8 −4.0 −8.0 1 2 150 −55 to 125 Unit 0～0.05 0.13 *BOTTOM VIEW 0.65 0.65 0.95 0.9±0.075 0.275±0.1 0.275±0.1 0.05 M A 1 2 3 V A 0.86 0.86 V 6 5 4 0.3±0.075 0.05 M A B Power dissipation (Note 2) Channel temperature Storage temperature W °C °C UDFN6 0.65±0.075 0.65±0.075 B 1. Source1 4. Source2 2. Gate1 3. Drain2 5. Gate2 6. Drain1 Note: JEDEC ― Using continuously under heavy loads (e.g. the application of JEITA ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2Y1A reliability significantly even if the operating conditions (i.e. Weight: 8.5 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i....