SSM6P54TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P54TU
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5 V drive • Suitable for high-density mounting due to compact package • Low on-resistance : Ron = 228 mΩ (max) (@ VGS = -2.5 V)
: Ron = 350 mΩ (max) (@ VGS = -1.8 V) : Ron = 555 mΩ (max) (@ VGS = -1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage
Drain current
Drai.
P-Channel MOSFET
SSM6P54TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P54TU
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5 V drive • Suitable for high-density mounting due to compact package • Low on-resistance : Ron = 228 mΩ (max) (@ VGS = -2.5 V)
: Ron = 350 mΩ (max) (@ VGS = -1.8 V) : Ron = 555 mΩ (max) (@ VGS = -1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage
Drain current
Drain power dissipation Channel temperature Storage temperature range
DC Pulse
VDS
-20
V
VGSS
±8
V
ID
-1.2 A
IDP
-2.4
PD(Note 1)
500
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Unit : mm
2.1±0.1 1.7±0.1
+0.1 0.3-0.05
1
6
2
5
3
4
2.0±0.1 1.3±0.1 0.65 0.65
+0.06 0.16-.