SSM85T03GJ

SSM85T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. D BV DSS R DS(ON) ID 30V 6mΩ 75A G S DESCRIPTION The SSM85T03GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM85T03J in TO-251, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability. G D S TO-252 (H) G D S TO-251 (J) ABSOLUTE MAXIMUM RATINGS www.DataSheet.co.kr Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 30 ± 20 75 55 350 107 0.7 3 Units V V A A A W W/°C mJ °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 29 -55 to 175 -55 to 175 THERMAL DATA Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.4 110 Unit °C/W °C/W 5/17/2005 Rev.2.3 www.SiliconStandard.com 1 of 5 Datasheet pdf - http://www.DataSheet4U.net/ ...