SSM95T07GP

SSM95T07GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant D BVDSS RDS(ON) ID 75V 5mΩ 80A G S www.DataSheet4U.com DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercialindustrial power applications and suited for low voltage applications such as DC/DC converters. G D TO-220(P) S ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 Rating 75 ±20 80 70 320 300 2 4 Units V V A A A W W/℃ mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 450 -55 to 175 -55 to 175 THERMAL DATA Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.5 62 Units ℃/W ℃/W 07/11/2007 Rev.1.00 www.SiliconStandard.com 1 SSM95T07GP ELECTRICAL CHARACTERISTICS (TJ=25 C unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-So...