Enhancement MOSFET. SSP7460N Datasheet

SSP7460N Datasheet PDF


Part Number

SSP7460N

Description

N-Channel Enhancement MOSFET

Manufacture

SeCoS

Total Page 2 Pages
Datasheet
Download SSP7460N Datasheet


SSP7460N
Elektronische Bauelemente
SSP7460N
12 A, 60 V, RDS(ON) 26 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell
density trench process to provide low RDS(on) and to ensure
minimal power loss and heat dissipation. Typical applications are
DC-DC converters and power management in portable and
battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
SOP-8PP
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8PP saves board
space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SOP-8PP
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
G
L
Millimeter
Min. Max.
0.85 1.00
5.3 BSC.
0.15 0.25
3.8 BCS.
6.05 BCS.
0.03 0.30
4.35 BCS.
0.40 0.70
REF.
θ
b
c
d
e
f
g
Millimeter
Min. Max.
0° 10°
5.2 BCS
0.30 0.50
1.27BSC
5.55 BCS.
0.10 0.40
1.2 BCS.
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS 60
V
Gate-Source Voltage
VGS 20
V
Continuous Drain Current 1
Pulsed Drain Current 2
TA=25°C
TA=70°C
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
12
9
50
2.3
A
A
A
Power Dissipation 1
TA=25°C
PD
5.0
W
TA=70°C
3.2
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Data
Maximum Junction to Ambient 1
t10 sec
Steady-State
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
25 °C / W
65
http://www.SeCoSGmbH.com/
18-Sep-2013 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2

SSP7460N
Elektronische Bauelemente
SSP7460N
12 A, 60 V, RDS(ON) 26 m
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current 1
Drain-Source On-Resistance 1
Forward Transconductance 1
Diode Forward Voltage
VGS(th) 1 - - V VDS = VGS, ID = 250μA
IGSS - - 100 nA VDS = 0V, VGS= 12V
IDSS - - 1 μA VDS = 48V, VGS= 0V
- -5
VDS = 48V, VGS= 0V, TJ=55°C
ID(ON) 40 - - A VDS = 5V, VGS= 10V
RDS(ON)
-
-
- 26 mVGS= 10V, ID = 6A
- 36
VGS= 4.5V, ID = 5A
gFS
- 40 -
S VDS= 15V,,ID = 6A
VSD
- 0.7 -
V IS= 2.3A, VGS= 0V
Dynamic 2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 15 -
ID= 6A
Qgs - 3 - nC VDS= 15V
Qgd - 5 -
VGS= 4.5V
Turn-On Delay Time
Td(ON)
- 15 -
Rise Time
Turn-Off Delay Time
Tr
Td(OFF)
- 10 -
- 54 -
ID= 1A, VDD= 15V
nS VGEN= 10V
RL= 6
Fall Time
Tf - 26 -
Notes
1. Pulse testPW 300 us duty cycle 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
18-Sep-2013 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2





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