Elektronische Bauelemente
SSQ73 10SG
73A, 100V, RDS(O ) 11mΩ -Ch Enhancement Mode Power MOSFET
RoHS Compliant Product ...
Elektronische Bauelemente
SSQ73 10SG
73A, 100V, RDS(O ) 11mΩ -Ch Enhancement Mode Power
MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSQ73N10SG is the highest performance trench N-ch
MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSQ73N10SG meet the RoHS and Green Product with Function reliability approved.
TO-220
FEATURES
RDS(on)≦11mΩ @VGS=10V RDS(on)≦14mΩ @VGS=4.5V High speed power switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
TO-220 Package
MARKING
73N10SG
Date Code
1
Gate
2
Drain
3
Source
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage Continuous Drain Current (Silicon Limited) Pulsed Drain Current
TC=25°C TC=100°C
VGS ID IDM
Avalanche Energy, Single Pulse, @L=0.1mH TC=25°C
EAS
Power Dissipation
TC=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient
RθJA
Maximum Thermal Resistance Junction-Case
RθJC
REF.
A B C D E F G
Millimeter
Min. Max.
9.96 10.36
14.7
16
2.74 BSC.
12.7 14.73
1.15 1.82
0.39 1.01
3.56 4.82
REF.
H I J K L M
Millimeter Min. Max.
2.54 BSC. 2.04 2.92
3.745 REF. 0.356 0.5 5.85 6.85 0.51 1.39
Ratings 100 ±20 73 52 190 22 125
-55 ~ 175
50 1.2
U...
