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SSRF10N60SL Datasheet

Part Number SSRF10N60SL
Manufacturers SeCoS Halbleitertechnologie
Logo SeCoS Halbleitertechnologie
Description N-Channel MOSFET
Datasheet SSRF10N60SL DatasheetSSRF10N60SL Datasheet (PDF)

SSRF10N60SL Elektronische Bauelemente 10A , 600V , RDS(ON) 1Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSRF10N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . ITO-220 B N D E FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decl.

  SSRF10N60SL   SSRF10N60SL






N-Channel MOSFET

SSRF10N60SL Elektronische Bauelemente 10A , 600V , RDS(ON) 1Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSRF10N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . ITO-220 B N D E FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available M A H J K L Millimeter Min. Max. 14.60 16.50 9.50 10.50 12.60 14.00 4.30 5.10 2.30 3.2 2.30 3.10 0.30 0.75 C G F REF. H J K L M N Millimeter Min. Max. 2.70 4.00 0.90 1.50 0.50 0.95 2.34 2.74 2.40 3.60 φ 3.0 φ 3.4 2 Drain L REF. A B C D E F G 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation Single Pulse Avalanche Energy 1 Symbol VDS VGS TC=25° C TC=100° C ID IDM TC=25° C Derate above 25° C EAS TJ, TSTG PD Rating 600 ±30 10 7 40 50 0.4 654 -55~150 Unit V V A A A W mJ ° C Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Case Notes: 1. L=30mH,IAS=6A, VDD=150V, RG=25Ω, Starting TJ =25° C RθJA RθJC 120 2.5 ° C /W ° C /W http://www.SeCoSGmbH.com/ Any changes of specification .


2014-08-10 : CX8517    SNP-C157    SNP-C158    SNP-C159    SNP-C15T    SNP-C153    SNP-C15A    SNP-C150    SNP-C154    SNP-C15F   


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