SSS2308

SSS2308 N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (m ) Max D SOT-23 80 @VGS = 4.5V 20V 2.3A 110 @VGS = 2.5V G S D FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 20 10 2.3 10 1.25 1.25 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 100 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, October 2006 (Rev 2.3) 1 SSS2308 Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance o Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) Condition VGS=0V, ID=250 A Min 20 Typ c Max Unit V VDS=16V, VGS=0V VGS= 10V, VDS=0V A 0.6 0.8 72.5 95 8.5 5.5 305 62 49 12 4 1 100 1.5 80 m 110 A nA V VDS=VGS ID=250 VGS=4.5V, ID=2.7A VGS=2.5V, ID=2.0A On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time ...