SSS2321

SSS2321 P-Channel Enhancement Mode MOSFET SOT-23 D Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 60 @VGS = -4.5V G 21 23 YW -20V -3.4A 80 @VGS = -2.5V 125 @VGS = -1.8V S D FEATURES ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable. ȟ!SOT-23 package. ȟ!Pb Free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -20 + -8 -3.4 -12 -0.74 0.89 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a RįJA 115 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, September 2007 (Rev 2.2) 1 SSS2321 Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage o Symbol BVDSS IDSS IGSS VGS(th) Condition VGS=0V, ID=-10ijA VDS=-16V, VGS=0V VGS=Ć8V, VDS=0V VDS=VGS ID=-250ijA VGS=-4.5V, ID=-3.2A Min -20 Typ c Max Unit V -1 Ć100 -0.4 51 70 115 -6 3 720 175 125 15 35 60 40 8 1.2 2.2 -1.2 25 55 -1.0 60 80 125 ijA nA V Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A mħ On-State Dr...