SSS2323

SSS2323 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) 35 @VGS = -4.5V -20V -4A 55 @VGS = -2.5V 100 @VGS = -1.8V G S D SOT-23 D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. o G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o Symbol VDS VGS ID IDM a Limit -20 + - 10 -4 -14 -1.7 1.25 -55 to 150 Unit V V A A A W o Drain-Source Diode Forward Current Maximum Power Dissipation a IS PD TJ, TSTG Operating Junction and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 100 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, January 2008 (Rev 1.0) 1 SSS2323 P-Channel Electrical Characteristics (TA = 25 C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage o Symbol BVDSS IDSS IGSS VGS(th) Condition VGS=0V, ID=-250 A Min -20 Typ c Max Unit V VDS=-16V, VGS=0V VGS= 8V, VDS =0V A -0.4 29 48 88 -10 13 1100 240 170 25 45 80 60 13 2 3.8 0.8 -1 100 -1.0 35 55 100 m A nA V VDS=VGS ID=-250 VGS=-4.5V, ID=-5.0A Drain-Source On-State Resistance RDS(ON) VGS=-2.5V, ID=-3.0A VGS=-1.8V, ID=-1.5A On-State Drain Current Forward Transconductan...