SSS2N60A

www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) SSS2N60A BVDSS = 600 V RDS(on) = 5 Ω ID = 1.3 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds 1 O o o Value 600 1.3 0.82 6 + _ 30 138 1.3 2.3 3.0 23 0.18 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ oC O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol R θ JC R θ JA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 5.5 62.5 Units o C/W Rev. B ©1999 Fairchild Semiconductor Corporation DataSheet 4 U .com www.DataSheet4U.com SSS2N60A Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Rev...