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SSS45N20B Datasheet

Part Number SSS45N20B
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V N-Channel MOSFET
Datasheet SSS45N20B DatasheetSSS45N20B Datasheet (PDF)

SSP45N20B/SSS45N20B November 2001 SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC conve.

  SSS45N20B   SSS45N20B






200V N-Channel MOSFET

SSP45N20B/SSS45N20B November 2001 SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Features • • • • • • 35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSP45N20B 200 35 22.2 140 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) SSS45N20B 35 * 22.2 * 140 * 650 35 17.6 5.5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for solderi.


2006-01-14 : PD75104    PIC18F258    PIC18F248    PIC18F448    PM5350    PM5349    PM5348    PM5347    PM5346    PM5345   


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