Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Technology co.,Ltd
SSS4N60
4 Amps,600Volts N-CHANNEL MOSFET
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DESC...
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Technology co.,Ltd
SSS4N60
4 Amps,600Volts N-CHANNEL
MOSFET
■
DESCRIPTION
The SSS4N60 is a high
voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power
MOSFET is usually used at high speed switching applications in power supplies .PWM motor controls, high efficient DC to DC converters and bridge circuits.
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FEATURES
RDS(ON) =2.5Ω@VGS=10V Ultra Low gate charge(tupical 15.0nC) Low reverse transfer capacitance(CRSS =typica8.0pF) Fast switching capability Avalanche energy specified Improved dv/dt capability,high ruggedness
4N60
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SYMBOL
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ORDERING INF ORMATION
Order Number Normal 4N60-TA3-T 4N60-TF3-T 4N60-TM3-T 4N60-TN3-R 4N60-TN3-T Lead Free Plating 4N60L-TA3-T 4N60L-TF3-T 4N60L-TM3-T 4N60L-TN3-R 4N60L-TN3-T TO-220 TO-220F TO-251 TO-252 TO-252 Package 1 G G G G G Pin Assignment 2 D D D D D 3 S S S S S Tube Tube Tube Tape Reel Tube Packing
Note:Pin Assignment: G:Gate D:Drain S:Source
4N60L-TA3-T
(1)Packing Type (2)Package Type (3)Lead Plating
(1)T:Tube,R:Tape Reel (2)TA3:TO220,TF3:TO-220F,TM3:TO-251,TN3:TO-252 (3)L:Lead Free Plating Blank:Pb/Sn
■ ABSOLUTE MAXIMUM RATINGS(Tc=25℃,unless
PARAMETER Drain-Source
Voltage Gate-Source
Voltage Avalanche Current(Note 2) Drain Currenet Continuous Drain Current Pulsed(Note 2) IDP Tc=25℃
otherwise specified)
PATINGS 600 ±30 4.4 ...