Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Advanced Power
MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 2.450 Ω (Typ.)
SSS4N80AS
BVDSS = 800 V RDS(on) = 3.0 Ω ID = 2.8 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source
Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds
Ο Ο Ο
Value 800 2.8 1.8
1 O
Units V A A V mJ A mJ V/ns W W/ C
Ο
18 + _ 30 314 2.8 4 2.0 40 0.32 - 55 to +150
Ο
O 1 O 1 O 3 O
2
C
300
Thermal Resistance
Symbol R R
θJC θJA
Characteristic Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 3.13 62.5
Units
Ο
C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
SSS4N80AS
Ο
N-CHANNEL POWER
MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown
Voltage Breakdown
Voltage Temp. Coeff. Gate Threshold
Voltage Gate-Source Leakage , F...