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SST39LF801C Datasheet

Part Number SST39LF801C
Manufacturers SST
Logo SST
Description (SST39LF801C / SST39LF802C) 8 Mbit (x16) Multi-Purpose Flash Plus
Datasheet SST39LF801C DatasheetSST39LF801C Datasheet (PDF)

8 Mbit (x16) Multi-Purpose Flash Plus A Microchip Technology Company SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C Data Sheet The SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C are 512K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF801C / SST39VF802C.

  SST39LF801C   SST39LF801C






(SST39LF801C / SST39LF802C) 8 Mbit (x16) Multi-Purpose Flash Plus

8 Mbit (x16) Multi-Purpose Flash Plus A Microchip Technology Company SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C Data Sheet The SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C are 512K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C write (Program or Erase) with a 2.7-3.6V power supply. These devices conforms to JEDEC standard pinouts for x16 memories. Features • Organized as 512K x16 • Single Voltage Read and Write Operations – 2.7-3.6V for SST39VF801C/802C – 3.0-3.6V for SST39LF801C/802C • Security-ID Feature – SST: 128 bits; User: 128 words • Fast Read Access Time: – 70 ns for SST39VF801C/802C – 55 ns for SST39LF801C/802C • Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention • Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 40 ms (typical) – Word-Program Time: 7 µs (typical) • Low Power Consumption (typical values at 5 MHz) – Active Current: 5 mA (typical) – Standby Current: 3 µA (typical) – Auto Low Power Mode: 3 µA (typical) • Automatic Write Timing – Internal VPP Generation • Hardware Block-Protection/WP# Input Pin – Top Block-Protection (top 8 KWord) – .


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